Search results for " DEP"
showing 10 items of 5568 documents
Phosphorous doping and drawing effects on the Raman spectroscopic properties of O=P bond in silica-based fiber and preform.
2012
International audience; We report an experimental study of the doping and drawing effects on the Raman activities of phosphorus (P)-doped silica-based optical fiber and its related preform. Our data reveal a high sensitivity level in the full width at half maximum value of the 1330 cm−1 (O = P) Raman band to the P-doping level. Its increase with the P doping level does not clash with an increase in the disorder of the O = P surrendering matrix. In addition, we observe that in the central core region of the sample (higher doping level), the drawing process decreases the relative band amplitude. We tentatively suggest that this phenomenon is due to the change in the first derivate of the bond…
Color Sensitive Response of Graphene/Graphene Quantum Dot Phototransistors
2019
We present the fabrication and characterization of all-carbon phototransistors made of graphene three terminal devices, coated with atomically precise graphene quantum dots (GQD). Chemically synthesized GQDs are the light absorbing materials, while the underlying chemical vapor deposition (CVD)-grown graphene layer acts as the charge transporting channel. We investigated three types of GQDs with different sizes and edge structures, having distinct and characteristic optical absorption in the UV–vis range. The photoresponsivity exceeds 106 A/W for vanishingly small incident power (<10–12 W), comparing well with state of the art sensitized graphene photodetectors. More importantly, the photor…
Economic Support during the COVID Crisis. Quantitative Easing and Lending Support Schemes in the UK
2021
Abstract We investigate how UK bank business lending responded to the simultaneous use of quantitative easing, leverage ratio capital requirements, and government COVID lending support schemes. We find no evidence that the Brexit wave increased lending to nonfinancial businesses, compared to the previous waves, except for QE-banks subject to the UK leverage ratio, suggesting that the ratio incentivised QE-banks to lend to businesses. The government schemes helped expand lending especially to SMEs post the COVID wave, indicating that complementing QE with other credit easing programmes can reinforce its impact on lending to the real economy. During COVID-stress, changes to the UK leverage ra…
Angular dependence of the domain wall depinning field in the sensors with segmented corners
2017
Rotating domain wall based sensors that have recently been developed are based on a segmented looping geometry. In order to determine the crucial pinning of domain walls in this special geometry, we investigate the depinning under different angles of an applied magnetic field and obtain the angular dependence of the depinning field of the domain walls. Due to the geometry, the depinning field not only exhibits a 180$^\circ$-periodicity but a more complex dependence on the angle. The depinning field depends on two different angles associated with the initial state and the segmented geometry of the corner. We find that depending on the angle of the applied field two different switching proces…
Effect of space charge on the negative oxygen flux during reactive sputtering
2017
Negative ions often play a distinctive role in the phase formation during reactive sputter deposition. The path of these high energetic ions is often assumed to be straight. In this paper, it is shown that in the context of reactive magnetron sputtering space charge effects are decisive for the energetic negative ion trajectories. To investigate the effect of space charge spreading, reactive magnetron sputter experiments were performed in compound mode with target materials that are expected to have a high secondary ion emission yield (MgO and CeO2). By the combination of energy flux measurements, and simulations, a quantitative value for the negative oxygen ion yield can be derived.
Enabling partially reconfigurable IP cores parameterisation and integration using MARTE and IP-XACT
2012
International audience; This paper presents a framework which facilitates the parameterization and integration of IP cores into partially reconfigurable SoC platforms, departing from a high-level of abstraction. The approach is based in a Model-Driven Engineering (MDE) methodology, which exploits two widely used standards for Systems-on-Chip specification, MARTE and IP-XACT. The presented work deals with the deployment level of the MDE approach, in which the abstract components of the platform are first linked to the lower level IP-XACT counterparts. At this phase, information for parameterization and integration is readily available, and a synthesizable model can be obtained from the gener…
High‐Quality Si‐Doped β‐Ga 2 O 3 Films on Sapphire Fabricated by Pulsed Laser Deposition
2020
The EU Horizon 2020 project CAMART2 is acknowledged for partly supporting the project, and the Ion Technology Centre, ITC, in Sweden is acknowledged for ion beam analysis (ERDA).
Topological insulator nanoribbon Josephson junctions: Evidence for size effects in transport properties
2020
We have used Bi$_2$Se$_3$ nanoribbons, grown by catalyst-free Physical Vapor Deposition to fabricate high quality Josephson junctions with Al superconducting electrodes. In our devices we observe a pronounced reduction of the Josephson critical current density $J_c$ by reducing the width of the junction, which in our case corresponds to the width of the nanoribbon. Because the topological surface states extend over the entire circumference of the nanoribbon, the superconducting transport associated to them is carried by modes on both the top and bottom surfaces of the nanoribbon. We show that the $J_c$ reduction as a function of the nanoribbons width can be accounted for by assuming that on…
Silicon Surface Passivation by ALD-Ga2O3: Thermal vs. Plasma-Enhanced Atomic Layer Deposition
2020
Silicon surface passivation by gallium oxide (Ga2O3) thin films deposited by thermal- and plasma-enhanced atomic layer deposition (ALD) over a broad temperature range from 75 °C to 350 °C is investigated. In addition, the role of oxidant (O3 or O-plasma) pulse lengths insufficient for saturated ALD-growth is studied. The material properties are analyzed including the quantification of the incorporated hydrogen. We find that oxidant dose pulses insufficient for saturation provide for both ALD methods generally better surface passivation. Furthermore, different Si surface pretreatments are compared (HF-last, chemically grown oxide, and thermal tunnel oxide). In contrast to previous reports, t…
Atomic Layer Deposition and Properties of Lanthanum Oxide and Lanthanum-Aluminum Oxide Films
2006
Atomic layer deposition (ALD) of lanthanum oxide on glass and silicon substrates was examined using lanthanum silylamide, La[N(SiMe 3 ) 2 ] 3 , and water as precursors in the substrate temperature range of 150-250 °C. The effect of pulse times and precursor evaporation temperature on the growth rate and refractive index was investigated. The films remained amorphous regardless of the deposition conditions. The resulting La 2 O 3 films contained noticeable amounts of hydrogen and silicon and were chemically unstable while stored in ambient air. Lanthanum aluminum oxide films were achieved with stoichiometry close to that of LaAlO 3 at 225°C from La[N(SiMe 3 ) 2 ] 3 , Al(CH 3 ) 3 , and H 2 O.…